Nexperia GANE7R0/GANE2R7/GANE1R8 100V GaN FETs are general-purpose, normally off e-mode devices that deliver superior performance and very low on-state resistance. The GANE7R0-100CBA is a 100V, 7.0mΩ Gallium Nitride (GaN) FET in a Wafer Level Chip-Scale Package (WLCSP). The GANE2R7-100CBA is 100V, 2.7mΩ Gallium Nitride (GaN) FET in a Wafer Level Chip-Scale Package (WLCSP). The GANE1R8-100QBA is a 100V, 1.8mΩ Gallium Nitride (GaN) FET in a Very-Thin-Profile Quad Flat No-Lead (VQFN) package. The Nexperia GANE7R0/GANE2R7/GANE1R8 100V GaN FETs are ideal for high-power density and high-efficiency power conversion, class D audio amplifiers, fast battery charging, and AC-to-DC converters.
